دیتاشیت PHN210,118
مشخصات دیتاشیت
نام دیتاشیت |
PHN210
|
حجم فایل |
213.809
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Obsolete
-
FET Type:
2 N-Channel (Dual)
-
FET Feature:
Logic Level Gate
-
Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
-
-
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.2A, 10V
-
Vgs(th) (Max) @ Id:
2.8V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 10V
-
Input Capacitance (Ciss) (Max) @ Vds:
250pF @ 20V
-
Power - Max:
2W
-
Operating Temperature:
-65°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
-
Supplier Device Package:
8-SO
-
Base Part Number:
PHP10
-
detail:
Mosfet Array 2 N-Channel (Dual) 30V 2W Surface Mount 8-SO